PART |
Description |
Maker |
PHI920-45 PH1920-45 |
Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ 无线双极功率45930-1990兆赫TRASISTOR
|
Tyco Electronics OKI SEMICONDUCTOR CO., LTD.
|
PHI920-33 PH1920-33 |
Low Power Zero-Drift Operational Amplifier with Internal Capacitors; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz Wireless Bipolar Power Transistor/ 33W 1930 - 1990 MHz
|
Tyco Electronics
|
AGR19125E AGR19125EF AGR19125EU |
125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor BJT 双极型晶体管
|
GHz Technology LEM
|
PH1920-45 |
WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ
|
Tyco Electronics
|
MHW1910D |
MHW1910-1 1930-1990 MHz, 10 W RF Power LDMOS Amplifier - Archived
|
Motorola
|
PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
PTFA192001F PTFA192001E |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
|
Infineon Technologies AG
|
MRF6S19100N |
MRF6S19100NBR1 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
MOTOROLA
|
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 14A I(C) | FO-91VAR
|
GHz Technology
|
MW5IC2030 |
GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
|
Motorola
|
CU42JB1P-1950-1T CU48RA5L-250-2T CU49PB3L-600-6C C |
1900 MHz - 2000 MHz RF/MICROWAVE ISOLATOR 100 MHz - 400 MHz RF/MICROWAVE ISOLATOR 400 MHz - 800 MHz RF/MICROWAVE 3 PORT CIRCULATOR 1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
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